Electronic and optical properties of GaN/AlN quantum dots on Si„111... subject to in-plane uniaxial stresses and variable excitation
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چکیده
subject to in-plane uniaxial stresses and variable excitation O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, and J. Massies Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA Centre National de la Recherche Scientifique, Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France
منابع مشابه
Effect of uniaxial stress on the polarization of light emitted from GaN ÕAlN quantum dots grown on Si(111)
Cathodoluminescence CL measurements of the ground-state excitonic transition of vertically stacked GaN /AlN quantum dots QDs exhibited an in-plane linear polarization anisotropy in close proximity to microcracks. Microcracks form as a result of a mismatch of the thermal expansion coefficient between the GaN /AlN layers and the Si 111 substrate. In close proximity to the cracks, the layers are f...
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The authors have studied the excitation-dependent optical properties of GaN/AlN self-assembled quantum dots QDs grown on Si 111 substrates. Ensembles of QDs were subject to various external stress configurations that resulted from the thermal expansion coefficient mismatch between the GaN/AlN layers and the Si 111 substrate and ranged from in-plane uniaxial stress, primarily along the 11-20 dir...
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The optical properties of vertically stacked self-assembled GaN/AlN quantum dots QD’s grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence CL . An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD luminescence was performed near stress-induced microcracks, revealing changes in the optical properties that ...
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Multiple layers of GaN/AlN quantum dot (QD) ensembles were grown by the Stranski-Krastanov method on Si(111) using molecular beam epitaxy. During the subsequent cooling from growth temperature, the thermal expansion coefficient mismatch between the Si substrate and GaN/AlN film containing the vertically stacked QDs leads to an additional biaxial tensile stress of 20–30 kbar in the III-nitride f...
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تاریخ انتشار 2010